Overview of Aluminum Nitride AIN
Aluminum nitride, covalent bond compound, chemical formula is AIN, is atomic crystal, belongs to diamond-like nitride, hexagonal crystal system, wurtzite crystal structure, non-toxic, white or off-white
Aluminum nitride, a covalent bond compound, is an atomic crystal, belonging to diamond-like nitride, hexagonal crystal system, wurtzite type crystal structure, non-toxic, white or off-white.
Aluminum nitride AlN can be stabilized up to 2200℃. The room temperature strength is high, and the strength decreases slowly with the increase of temperature. It has good thermal conductivity and small coefficient of thermal expansion, making it a good thermal shock resistance material. It has strong resistance to molten metal corrosion and is an ideal crucible material for melting and casting pure iron, aluminum or aluminum alloy. Aluminum nitride is also an electrical insulator with good dielectric properties, and it is also very promising for electrical components. The aluminum nitride coating on the surface of gallium arsenide can protect it from ion implantation during annealing. Aluminum nitride is also a catalyst for the transformation from hexagonal boron nitride to cubic boron nitride. It reacts slowly with water at room temperature. It can be synthesized from aluminum powder at 800~1000℃ in ammonia or nitrogen atmosphere. The product is white to gray-blue powder. Or synthesized by Al2O3-C-N2 system at 1600~1750℃, the product is off-white powder. Or aluminum chloride and ammonia are made by gas phase reaction. The coating can be synthesized by vapor deposition method in AlCl3-NH3 system.
Aluminum nitride AIN application
The report pointed out that most of the current research is developing a semiconductor (gallium nitride or alloy aluminum gallium nitride) based light-emitting diode that operates in ultraviolet light, and the wavelength of light is 250 nanometers. There was a report in May 2006 that an inefficient diode can emit light waves with a wavelength of 210 nanometers. Measured by vacuum ultraviolet reflectance, a single aluminum nitride crystal has an energy gap of 6.2 eV. In theory, the energy gap allows some waves with a wavelength of about 200 nanometers to pass. However, many difficulties need to be overcome when it is implemented commercially. Aluminum nitride is used in optoelectronic engineering, including as dielectric layer in optical storage interface and electronic substrate, as chip carrier with high thermal conductivity, and for military use.
Due to the characteristics of the piezoelectric effect of aluminum nitride, the epitaxial stretching of aluminum nitride crystals is also used in surface acoustic wave detectors. The detector will be placed on the silicon wafer. There are very few places where these thin films can be reliably manufactured.
The use of aluminum nitride ceramics has high room temperature and high temperature strength, small expansion coefficient, and good thermal conductivity. It can be used as a heat exchanger material for high-temperature structural parts.
Using aluminum nitride ceramics can withstand the corrosion properties of iron, aluminum and other metals and alloys, it can be used as a crucible and casting mold material for melting metals such as Al, Cu, Ag, and Pb.
Aluminum nitride AIN price
The price of aluminum nitride AIN powder will change randomly with factors such as production cost, transportation cost, international situation, exchange rate, and market supply and demand of aluminum nitride AIN powder. Tanki New Materials Co., Ltd. aims to help various industries and chemical wholesalers find high-quality, low-cost nanomaterials and chemicals by providing a full set of customized services. If you are looking for aluminum nitride AIN powder, please feel free to send an inquiry to get the latest price of aluminum nitride AIN powder.
Aluminum nitride AIN supplier
As a global supplier of aluminum nitride AIN powder, Tanki New Materials Co., Ltd. has extensive experience in the performance, application and cost-effective manufacturing of advanced and engineered materials. The company has successfully developed a series of powder materials (molybdenum disilicide, lanthanum nitride LaN powder, calcium silicide, iron boride), high-purity targets, functional ceramics and structural devices, and provides OEM services.
|AlN Ceramic Powder Injection Molding Components Properties|
|Other Names||Aluminium nitride|
|Appearance||White to pale yellow powder|
|Melting Point||2200 °C|
|Boiling Point||2517 °C (dec.)|
|Density||2.9 to 3.3 g/cm3|
|Solubility in H2O||N/A|
|Electrical Resistivity||10 to 12 10x Ω-m|
|Poisson's Ratio||0.21 to 0.31|
|Specific Heat||780 J/kg-K|
|Thermal Conductivity||80 to 200 W/m-K|
|Thermal Expansion||4.2 to 5.4 µm/m-K|
|Young's Modulus||330 GPa|
|AlN Ceramic Powder Injection Molding Components Health & Safety Information|
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