Structure and characteristics of indium nitride

Indium nitride is a new type III nitride material. The attraction of this material lies in its excellent electronic transport performance and narrow energy band, which is expected to be used in the manufacture of new high-frequency terahertz communication optoelectronic devices.

Indium nitride (InN) is a kind of nitride semiconductor material. The stable phase at room temperature and pressure is a hexagonal wurtzite structure, which is a direct band gap semiconductor material

Structure and characteristics

Indium nitride is a new type III nitride material. The attraction of this material lies in its excellent electronic transport performance and narrow energy band, which is expected to be used in the manufacture of new high-frequency terahertz communication optoelectronic devices. Indium nitride nanostructures are the basis for the development of related quantum devices. However, the growth of InN nanomaterials has often used indium oxide or chloride, which will introduce many impurities into the indium nitride nanomaterials, which will greatly reduce the optical and electrical properties of the material. With the support of the 973 project, the Liu Xianglin research team of the Institute of Semiconductors of the Chinese Academy of Sciences proposed for the first time a hydrogen-induced autocatalysis method, using metal organic chemical vapor deposition technology to grow a hexagonal symmetric indium nitride nanoflower structure (Appl. Phys. Lett). . 89, 071113 (2006)). Since this method does not use indium oxides, chlorides and any other foreign catalysts, the introduction of foreign impurities is fundamentally avoided, and it is expected that the optical and electrical properties of the material can be significantly improved. As soon as the results were published, the website of the British "Nature" magazine listed it as a research highlight in the first week of September 2006 in its Nature Nanotechnology column. “(Nanostructures: Say it with flowers)” has written a special comment on the topic, and believes that the research results are not only for the in-depth understanding of the growth mechanism of InN, but also have important value for the synthesis of novel InN nanodevice structures.

Characteristics of Indium Nitride

The photoluminescence characteristics of indium nitride films grown by metal organic chemical vapor deposition. Because indium nitride itself has a high background carrier concentration, the Fermi energy level is above the conduction band. Through the energy band diagram and Fitting the photoluminescence spectrum with the correlation formula can get the band gap of the grown indium nitride to be 0.67cV, and the corresponding carrier concentration can be calculated as n = 5.4×10cm, thus finding a link between photoluminescence spectroscopy and The method of both carrier concentration.

In addition, by measuring the luminescence characteristics of indium nitride under variable temperature conditions, the luminescence peak position and the relationship between luminescence intensity and temperature can be studied. It is found that the photoluminescence intensity gradually decreases with the increase of temperature, and the luminescence peak position is only red with the increase of temperature. There is no “S”-shaped non-monotonic change. This difference may be caused by the excessively high FWHM of the photoluminescence spectrum, and may also be related to the carrier concentration and the built-in electric field strength.

Overview of Indium Nitride ScN Powder

Indium Nitride ScN powder is a III-V type indirect band gap semiconductor. It consists of scanning ions and nitrogen ions. The crystal structure of salt rock can be grown on tungsten foil by sublimation and condensation. The lattice constant of rock salt is 0.451 nm, the indirect band gap is 0.9 eV, and the direct band gap is 2 to 2.4 eV. These crystals can be synthesized by melting indium and nitrogen by deposition methods such as scanning, magnetron sputtering, MBE, and HVPE.

Indium Nitride ScN powder application

Due to the good lattice matching between the two crystal structures, the ScN film improves the performance of the GaN device, which has attracted special attention. In addition, ScN has good thermoelectric properties. However, in such applications, it is necessary to reduce its high thermal conductivity

ScN nitriding scanning powder is used as the raw material of phosphorus.

Indium Nitride ScN powder is used as an additive for special alloys and non-ferrous metals;

Gallium nitride ScN powder is used for high refractive index metal epitaxial film;

Gallium nitride ScN powder is used for wear-resistant materials, packaging and protective materials;

Indium Nitride ScN powder is used to make magnetic semiconductor materials.

Gallium Nitride ScN powder price

The price of indium nitride ScN powder will change randomly according to factors such as production cost, transportation cost, international situation, exchange rate, supply and demand of indium nitride ScN powder. It aims to provide a full set of customized services to help various industries and chemical wholesalers find high-quality, low-cost nanomaterials and chemical products. If you are looking for indium nitride ScN powder, please feel free to send an inquiry to get the latest price of indium nitride ScN powder.

Indium Nitride ScN Powder Supplier

As a global supplier of indium nitride ScN powder, Tanki New Materials Co., Ltd. has extensive experience in the performance, application and cost-effective manufacturing of advanced engineering materials. The company has successfully developed a series of powder materials (molybdenum disilicide, lanthanum nitride (LaN powder, calcium silicide, iron boride), high-purity targets, functional ceramics and structural devices, and provides OEM services.