Properties and stability of gallium nitride

Gallium nitride is an inorganic substance with the chemical formula GaN, which is a compound of nitrogen and gallium. It is a direct bandgap semiconductor and has been commonly used in light-emitting diodes since 1990. This compound has a wurtzite-like structure and high hardness. The energy gap of gallium nitride is very wide, 3.4 electron volts, which can be used in high-power, high-speed optoelectronic components. For example, gallium nitride can be used in violet laser diodes, and can be used in non-linear semiconductor-pumped solid-state lasers ( Diode-pumped solid-state laser) produces violet (405nm) laser light.

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Properties and stability of gallium nitride

Will not decompose if used and stored according to specifications.

Avoid contact with oxides, heat, moisture/humidity.

GaN begins to decompose at 1050°C: 2GaN(s)=2Ga(g)+N2(g). X-ray diffraction has indicated that the GaN crystal belongs to the hexagonal system of the wurtzite lattice type.

In nitrogen or helium, GaN will slowly volatilize at a temperature of 1000 °C, which proves that GaN is stable at higher temperatures, and its vapor pressure at 1130 °C is lower than that calculated from enthalpy and entropy. It is due to the presence of polymer molecules (GaN) x.

GaN is not decomposed by cold or hot water, dilute or concentrated hydrochloric acid, nitric acid and sulfuric acid, or cold 40% HF. It is also stable in cold concentrated alkali, but dissolves in alkali when heated

GaN synthesis method

1. Nitrogen does not react directly with gallium even at 1000°C. Loose gray powdery GaN can be obtained by heating metal gallium at 1050-1100°C for 30min in ammonia flow. The addition of ammonium carbonate provides gas to agitate the liquid metal and promote contact with the nitriding agent.

2. GaN can also be obtained by firing finely ground GaP or GaAs in a dry ammonia stream.

Gallium Nitride Overview

GaN powder has the characteristics of wide direct band gap, strong atomic bond, high thermal conductivity, good chemical stability (almost no acid corrosion), etc., and has broad application prospects in optoelectronics, high temperature, high-power devices and high-frequency microwave devices.

Gallium Nitride Applications

1. GaN can be used for large TV screens or smaller full-color panels in trains or buses. GaN-based LEDs are more efficient, offering another possibility for blue and green LEDs.

2. Gallium nitride is used in power semiconductor fields such as electric vehicles and photovoltaic power generation.

3. Gallium nitride is used in the 5G radio frequency field. Due to the increasingly high requirements of 5G on RF power and energy consumption, the 5G RF field will gradually replace silicon-based materials with gallium nitride.

4. GaN is used in the field of fast charging of mobile phones. GaN chargers have the characteristics of high power, small size and high efficiency, which are the key to breakthrough ultra-fast charging technology.

5. In terms of detectors, GaN ultraviolet detectors have been successfully developed, with a wavelength of 369 nm, and the response speed is comparable to that of Si detectors. Research in this area is still in its infancy. GaN detectors will have important applications in flame detection and missile warning.

6. GaN material series has low heating rate and high breakdown electric field, and is an important material for the development of high-temperature and high-power electronic devices and high-frequency microwave devices.

Gallium Nitride Price

The price of gallium nitride will vary randomly with factors such as production costs, transportation costs, international situations, exchange rates, and supply and demand in the gallium nitride market. Tanki New Materials Co., Ltd. aims to help industries and chemical wholesalers find high-quality, low-cost nanomaterials and chemicals by providing a full range of customized services. If you are looking for gallium nitride, please feel free to send an inquiry to get the latest price of gallium nitride.

Gallium Nitride Suppliers

As a global GaN supplier, Tanki New Materials Ltd. has extensive experience in the performance, application and cost-effective manufacturing of advanced and engineered materials. The company has successfully developed a series of powder materials (titanium nitride, silicon nitride, titanium nitride, etc.) high-purity targets, functional ceramics and structural devices, and provides OEM services.

Technical Parameter of Gallium Nitride GaN powder:

Product Name MF Purity Particle Size Melting Point Density Color
gallium nitride GaN 99.99% -60 mesh 1700℃ 6.1g/mL,25/4℃ light yellow

Chemical Composition of Gallium Nitride GaN powder:

GaN Cu Ni Zn Al Na Cr In Ca
99.99% 0.0005% 0.0003% 0.0005% 0.001% 0.0005% 0.0003% 0.0005% 0.005%

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