Prospect development and application of GaN products

Overview of Gallium Nitride GaN products

Gallium Nitride GaN is an inorganic, chemical gallium nitride, a compound of nitrogen and gallium, and a binary III/V direct bandgap semiconductor used in blue light-emitting diodes since the 1990s. The compound is a very hard material with a purple rock crystal structure. Its 3.4 EV broadband provides special features for applications in optical electronics, high-power and high-frequency equipment. For example, GaN is a substrate that can produce violet (405 nm) laser diodes without double nonlinear optical frequency.

Its low sensitivity to ionizing radiation (with another group of III nitrides) makes it a suitable material for satellite solar cell arrays. Military and space applications may also benefit, because the device exhibits stability in a radiation environment.

Since Gallium Nitride GaN transistors can operate at higher temperatures and higher voltages than arsenide (GaAs) transistors, they can produce ideal power amplifiers at microwave frequencies. In addition, Gallium Nitride GaN also provides a desirable feature for terahertz devices. Due to high power density and voltage breakdown limitations, Gallium Nitride GaN is also expected to become a candidate material for 5G cellular base stations. 

The research and application of Gallium Nitride GaN materials are the frontiers and hotspots of global semiconductor research. It is a new type of semiconductor material for the development of semiconductor materials such as microelectronics, optoelectronics, SiC, diamond, etc. It is called the first generation of GE, Si A, the third generation of semiconductor materials after semiconductor materials, the second generation of GaAs, and InP compounds. . It has the advantages of wide direct band gap, strong atomic bond, high thermal conductivity, high chemical stability (almost no acid corrosion), etc. It has broad application prospects in light electronics, high temperature and high power devices and high frequency microwave devices.

Prospect development and application of Gallium Nitride GaN products

Gallium nitride (GaN), as a new type of wide band gap third-generation compound semiconductor, represents the future development trend in power and microwave fields. It has the advantages of high breakdown electric field and high saturation current velocity. At the application level, Can increase the frequency, reduce the volume, reduce the power and so on.

As one of the representatives of the third-generation semiconductor materials, gallium nitride GaN itself is a kind of partially substituted and revolutionary materials and devices in terms of performance characteristics. This business first started with the needs of the avionics business but is now far more than Demands in this field, such as 5G communications, cloud computing, data centers, new power supplies, etc. The company's current development and industrialization of gallium nitride and GaN materials and devices are still much faster than our initial layout. Samples have been delivered to well-known manufacturers in the industry, and some power devices have been finalized. Of course, as a new technology and new product, its maturity still needs a certain cycle. In terms of performance contribution, the current time is not easy to predict, but I suggest you Still look at it conservatively and cautiously.

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For the power device market, the development speed of gallium nitride GaN is very fast, and the main growth point comes from a large number of consumer and industrial applications. The advantage lies in the irreplaceability of gallium nitride GaN. Take mobile phone chargers as an example. Now various mobile phone manufacturers are pushing fast charging. The faster the charging speed required by the mobile phone, the higher the power requirements. If the device is not changed, the greater the output power and the size of the charger. And the cost will also increase linearly.

However, the needs of consumers and mobile phone manufacturers have two aspects, not only charging speed, but also controlling volume and cost. From the perspective of the development process of charger technology, there is limited room for compression and improvement in other aspects, and only the most core power devices can be started. This is a good entry point, and it will face a huge market soon. China will have it in one year. Hundreds of millions of mobile phones are shipped, and a mobile phone has at least one charger. The same applies to industrial applications. At present, communication base stations have begun to use gallium nitride as a power source to support envelope tracking.

For the microwave device market, the same logic is also happening, and microwave devices have already had a relatively mature market, such as phased array radars in special fields. The current domestic annual output is not small, such as communication base stations. At present, 4G base stations have 20-30% of power amplifier devices use gallium nitride. With the advent of the 5G era, most base station power amplifier devices will be updated to gallium nitride. New industrial applications have brought a clear trend of technological change. The application prospect of gallium fluoride is extremely broad.

Gallium nitride GaN started relatively late. Gallium nitride GaN was only used in microwave or power devices after 2005. So from this point of view, gallium nitride GaN is the branch with the smallest gap between my country and international semiconductors. It’s not too late to start, especially in LED and radar, which has been strongly supported by the country in recent years. Therefore, this area has a leading position. In addition to the support of national policies in microwave and power devices, in recent years, many domestic companies have turned to this March.

Application of Gallium Nitride GaN products

1. Gallium nitride GaN can be used for large TV screens or smaller full-color panels in trains or buses. GaN-based LEDs are more efficient. So it offers another possibility for blue and green LEDs.

2. Gallium nitride GaN is used in power semiconductor fields such as electric vehicles and photovoltaic power generation.

3. Gallium nitride GaN is used in the 5G radio frequency field. As 5G has higher and higher requirements for RF power and energy consumption, the 5G RF field will gradually replace silicon-based materials with gallium nitride.

4. Gallium nitride GaN is used in the field of fast charging of mobile phones. Gallium nitride GaN charger has the characteristics of high power, small size and high efficiency, which is the key to the breakthrough of ultra-fast charging technology.

5. In terms of detectors, gallium nitride GaN ultraviolet detectors have been successfully developed, with a wavelength of 369nm and a response speed equivalent to that of Si detectors. Research in this area is still in its infancy. Gallium nitride GaN detectors will be used for flame detection and missile early warning. There are important applications in these areas.

6. Gallium nitride GaN material series have low heating rate and high breakdown electric field. It is an important material for the development of high-temperature and high-power electronic devices and high-frequency microwave devices.

Gallium Nitride GaN product price

The price of gallium nitride GaN will vary randomly with factors such as production cost, transportation cost, international conditions, market supply and demand of gallium nitride GaN. Tanki New Materials Co., Ltd. aims to help various industries and chemical wholesalers find high-quality products by providing a full range of gallium nitride GaN products. Customized services, low-cost nanomaterials and chemicals. If you are looking for gallium nitride GaN, please feel free to send an inquiry to get the latest price of gallium nitride GaN products.

Suppliers of Gallium Nitride GaN products

As a global supplier of gallium nitride GaN products, Tanki New Materials Co., Ltd has extensive experience in the performance, application and cost-effective manufacturing of advanced engineering materials. The company has successfully developed a series of powder materials (titanium nitride, silicon nitride, titanium nitride, etc.) high-purity targets, functional ceramics and structural devices, and provides OEM services.

Technical Parameter of Gallium Nitride GaN powder

Product Name MF Purity Particle Size Melting Point Density Color
gallium nitride GaN 99.99% -60 mesh 1700℃ 6.1g/mL,25/4℃ light yellow

Chemical Composition of Gallium Nitride GaN powder

GaN Cu Ni Zn Al Na Cr In Ca
99.99% 0.0005% 0.0003% 0.0005% 0.001% 0.0005% 0.0003% 0.0005% 0.005%

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