Overview of High Insulation Resistance 200W/Mk Thermal Conductivity Aluminum Nitride Aln Ceramic Substrate for 5g RF & IGBT Power Modules

High Insulation Resistance 200W/Mk Thermal Conductivity Aluminum Nitride Aln Ceramic Substrate for 5g RF & IGBT Power Modules is an advanced technical ceramic renowned for its exceptional thermal conductivity and reliable electrical insulation. It is a key material in high-power electronics, LED lighting, and semiconductor processing, effectively managing heat in demanding applications where performance and reliability are critical.

Features of High Insulation Resistance 200W/Mk Thermal Conductivity Aluminum Nitride Aln Ceramic Substrate for 5g RF & IGBT Power Modules

• High Thermal Conductivity: Offers excellent heat dissipation, comparable to beryllia (BeO).
• Electrical Insulation: Maintains high electrical resistivity even at elevated temperatures.
• Low Thermal Expansion: Matches the coefficient of thermal expansion of silicon, ideal for semiconductor substrates.
• Excellent Mechanical Strength: Possesses good mechanical properties for structural integrity.
• High-Temperature Stability: Performs reliably in harsh environments and at high temperatures.
• Non-Toxic: A safe alternative to beryllium oxide (BeO) ceramics.

Specification of High Insulation Resistance 200W/Mk Thermal Conductivity Aluminum Nitride Aln Ceramic Substrate for 5g RF & IGBT Power Modules

Heat eliminates electronic devices. Modern 5G RF equipment and IGBT power components push hard. They generate extreme warmth. Conventional products struggle. Light Weight Aluminum Nitride (AlN) ceramic substrates fix this. Our AlN substrates supply extreme thermal conductivity: 200 Watts per meter-Kelvin (W/mK). This number is high. It’s close to some metals. Heat actions quickly away from delicate elements.

High insulation resistance is vital. These substrates block electrical present extremely well. They stop shorts. They ensure signals remain clean. This insulation remains strong also at heats. Performance doesn’t drop when points get hot. This mix is rare. Good warm flow plus strong insulation is important for power electronics.

5G RF components demand pureness. Signals run at really high regularities. Any interference ruins performance. AlN’s electric insulation avoids signal loss. Its thermal monitoring keeps amplifiers cool. Secure temperature level suggests stable signal result. Power density rises without overheating failings.

IGBT components switch over high currents swiftly. This produces extreme, localized warmth spikes. Criterion porcelains fracture under this tension. AlN handles it. Its thermal conductivity spreads warmth instantly. Locations go away. The substratum remains mechanically steady. Device life times expand dramatically. Performance improves. Less power turns into waste heat.

We manufacture these AlN substratums exactly. We make use of innovative processes. This makes certain regular 200W/mK thermal efficiency. We achieve high thickness. We preserve excellent surface area coating. The substrates are flat. They are smooth. They await circuit metallization. We evaluate rigorously. We confirm insulation resistance meets demanding requirements (ASTM D257). Dependability is confirmed under tough problems. These substratums take care of the power. They manage the warmth. They protect your essential electronics.

Applications of High Insulation Resistance 200W/Mk Thermal Conductivity Aluminum Nitride Aln Ceramic Substrate for 5g RF & IGBT Power Modules

Aluminum Nitride ceramic substratums supply phenomenal efficiency for demanding electronics. Their high insulation resistance protects against electric leak. This is crucial for secure operation. Their thermal conductivity gets to 200W/mK. This is extremely high. It brings warm away quickly. This combination resolves large problems in modern power gadgets.

5G RF modules require these substrates. 5G circuits operate at high frequencies. They produce substantial warm in tiny rooms. Effective heat removal is vital. Light weight aluminum Nitride maintains temperature levels low. This protects against signal drift. Steady operation is necessary for trustworthy 5G connections. The material deals with the high regularities well. It minimizes signal loss. This enhances overall network efficiency.

IGBT power components profit considerably also. IGBTs switch large currents. They create extreme warm. Overheating reasons failings. Aluminum Nitride draws warm far from the semiconductor chips successfully. This secures the IGBTs. It allows greater power thickness. Systems can be smaller and extra effective. Integrity enhances substantially. The substratum handles large power rises. It endures difficult thermal biking. This indicates longer module life.

Making use of Aluminum Nitride substrates results in far better styles. Designers achieve greater power in smaller sized plans. Gadgets run cooler and a lot more dependably. This product is a vital enabler for next-generation 5G facilities and electrical automobile power systems. Its distinct residential or commercial properties fulfill the stringent thermal and electrical demands.

Company Profile

Tanki New Materials Co.Ltd. focus on the research and development, production and sales of ceramic products, serving the electronics, ceramics, chemical and other industries. Since its establishment in 2015, the company has been committed to providing customers with the best products and services, and has become a leader in the industry through continuous technological innovation and strict quality management.

Our products includes but not limited to Aerogel, Aluminum Nitride, Aluminum Oxide, Boron Carbide, Boron Nitride, Ceramic Crucible, Ceramic Fiber, Quartz Product, Refractory Material, Silicon Carbide, Silicon Nitride, ect. please feel free to contact us.

Payment Methods

T/T, Western Union, Paypal, Credit Card etc.

Shipment Methods

By air, by sea, by express, as customers request.

5 FAQs of High Insulation Resistance 200W/Mk Thermal Conductivity Aluminum Nitride Aln Ceramic Substrate for 5g RF & IGBT Power Modules

What makes Aluminum Nitride ceramic substrates special? These substrates handle heat extremely well. Their thermal conductivity reaches 200W/mK. This means they move heat away from sensitive electronic parts fast. Preventing overheating is crucial for high-power devices.

Why is AlN good for 5G RF modules? 5G components work very hard and get hot quickly. AlN pulls that heat out efficiently. This keeps the modules stable. Consistent performance matters for clear, fast 5G signals. AlN helps achieve this reliability.

Why use AlN for IGBT power modules? IGBTs generate significant heat during operation. Too much heat damages the module. AlN’s high thermal conductivity pulls this heat into the cooling system rapidly. This protects the IGBTs. It allows them to work reliably at high power levels.

Why is high insulation resistance important? Electricity must flow only where intended. AlN ceramic blocks electricity extremely well. This high insulation resistance stops dangerous electrical leaks. It prevents short circuits. This safety is vital for protecting expensive components and users.

What sets your AlN substrate apart? Our material combines the best properties reliably. We achieve the high 200W/mK thermal conductivity consistently. The electrical insulation resistance is exceptionally high. This performance is proven in demanding 5G and power module applications. You get the heat management and electrical safety needed.