One of the main uses of titanium silicide

Overview of titanium disilicide

Titanium disilicide TiSi2 powder (CAS 12039-83-7) has high melting point, high corrosion resistance, high oxidation resistance, good electrical conductivity, high temperature ductility, and is the intermediate phase of the binary alloy system.

With the rapid development of ultra-large-scale integrated circuits (ULSI), the size of equipment and devices is getting smaller and smaller, and people's requirements for device size and film quality and thickness uniformity are getting higher and higher. At present, the line width of semiconductor devices has been as small as 0.1 μm or less, and the original process has been unable to obtain low-resistance continuous wires. New materials, new processes, and new deposition systems must be found to improve or replace aluminum and heavily doped polysilicon used in circuit metallization connections. Among these new materials, interest in metal silicides that have high conductivity and high temperature stability and are compatible with current microelectronic manufacturing processes have increased. In the widely studied metal silicides (such as TiSi2, NiSi, CoSi2, WSi2, TaSi2, MoSi2), titanium silicide (TiSi2) has very ideal characteristics: high conductivity, high selectivity, good thermal stability, and adsorption of Si Good performance, good process adaptability, and little interference to silicon connection parameters. Therefore, in integrated circuit devices, titanium silicide is widely used in metal oxide semiconductor (MOS), metal oxide semiconductor field effect transistor (MOSFET) and dynamic random access memory (DRAM) gate, source/drain, Interconnect and ohmic contact manufacturing.

Titanium silicide is widely used in the manufacture of metal oxide semiconductor (MOS), metal oxide semiconductor field effect transistors (MOSFET) and dynamic random access memory (DRAM) gates, source/drain, interconnects and ohmic contacts, For example, the application is as follows:

1) Preparation of titanium silicide barrier layer. The device adopting the manufacturing method of the titanium silicide barrier layer includes a non-silicide region and a silicide region separated by an isolation region. The upper surface of the device is covered with a sacrificial oxide layer. The invention includes: using a photolithography process to cover the non-silicide area with photoresist and expose the silicide area. The sacrificial oxide layer in the silicide region is etched away by a wet etching process. The silicon exposed in the silicide area is amorphized as an implant; the photoresist remaining in the non-silicide area is removed; the titanium metal is sputtered for the first alloying treatment; the non-alloyed titanium metal is removed by wet etching. The second alloying treatment. The invention removes the silicide blocking oxide layer in the prior art and reduces the process cost; at the same time, the loss of the isolation oxide film is reduced by etching and the process stability is improved.

2) In-situ synthesis of titanium silicide (Ti5Si3) to prepare particle-reinforced aluminum titanium carbide (Ti3AlC2)-based composite materials. By adding a certain amount of silicon, Ti3AlC2/Ti5Si3 composites with different volume ratios are prepared, in which the volume percentage of the titanium silicide particle reinforcement phase is 10-40%. The specific preparation method is as follows: First, use titanium powder, aluminum powder, silicon powder, and graphite powder as raw materials, and the molar ratio of Ti:Al:Si:C is 3:(1.1-x):x:(1.8 ~ 2.0), where x It is 0.1 ~ 0.5. Mix the raw material powder for 8-24 hours by physical and mechanical method, put it into a graphite mold, apply a pressure of 10-20 MPa, and sinter in a hot press furnace with a protective atmosphere at a heating rate of 10-50 °C/min and a sintering temperature of 1400 ～1600℃, sintering time is 0.5～2 hours, sintering pressure is 20～40MPa. The invention can prepare high-purity and high-strength aluminum titanium carbide/titanium silicide composite materials at a lower temperature and a shorter time.

3) Preparation of composite functional titanium silicide coated glass. Deposit thin films on ordinary float glass substrates or deposit silicon thin films between them. By preparing a composite film of titanium silicide and silicon or doping a small amount of activated carbon or nitrogen in the film, a titanium silicide composite silicon carbide or titanium carbide or titanium silicide composite silicon nitride or titanium nitride composite film can be obtained. Mechanical strength and chemical resistance are improved. The invention is a new type of coated glass and low-E glass with dimming and heat insulation functions

4) The preparation of semiconductor components includes a silicon substrate. The gate, source and drain are formed on the silicon substrate, and an insulating layer is formed between the gate and the silicon substrate. The gate is located on the insulating layer. The polysilicon layer is made of polysilicon. The layer is composed of a titanium silicide layer. A protective layer is formed on the titanium silicide layer. The protective layer, the titanium silicide layer, the polysilicon layer, and the insulating layer are surrounded by a three-layer structure layer, which is nitrogen from the inside to the outside. A silicon silicide spacer layer, a mother layer, a silicon oxide spacer layer, and a titanium silicide layer are formed on the source and drain electrodes, an inner dielectric layer is formed on the silicon substrate, and a contact window opening is formed in the inner dielectric layer. By adopting the above technical scheme, the utility model can completely insulate the wire in the grid from the contact window without short circuit.

Application of titanium disilicide

Due to its low membrane resistivity, high melting point, and stable chemical properties, titanium disilicide has broad application prospects in the fields of microelectronics, aerospace, marine and submarine manufacturing, medical treatment, and jewelry manufacturing. Titanium disilicide TiSi2 powder is used in microelectronics and semiconductors, aerospace high-temperature materials, coatings, and ceramic materials. In integrated circuit devices, titanium silicide is widely used in metal oxide semiconductor (MOS) and metal oxide semiconductor field effect transistors (MOSFET) And dynamic random access memory (DRAM) gates, source/drain, interconnects and ohmic contacts are being manufactured.

Titanium disilicide price

The price of titanium disilicide varies randomly with changes in production costs, transportation costs, international conditions, exchange rates, and titanium disilicide market supply and demand. Tanki New Materials Co.,Ltd. aims to help various industries and chemical wholesalers find high-quality, low-cost nanomaterials and chemicals by providing a full set of customized services. If you are looking for titanium disilicide materials, please feel free to contact for the latest titanium disilicide prices.

Suppliers of Titanium Disilicide

As a global titanium disilicide supplier, Tanki New Materials Co.,Ltd. has extensive experience in the performance, application and cost-effective manufacturing of advanced and engineered materials. The company has successfully developed a series of powder materials (molybdenum silicide, tantalum silicide), zirconium silicide, etc.), high-purity targets, functional ceramics and structural devices, and provides OEM services.

Technical parameters of titanium disilicide TiSi2 powder

The chemical composition of titanium disilicide TiSi2 powder