SiC nanoparticles have a large specific surface area, high surface activity, low loose loading density, excellent mechanical, thermal, electrical and chemical properties, that is, high hardness, high wear resistance and good self-lubrication, high thermal conductivity, low thermal expansion coefficient and high-temperature strength and other characteristics. At the same time, it also has the characteristics of high thermal conductivity, high stability, high purity, good wear resistance and a small thermal expansion coefficient. SiC nanoparticles are also oxidation resistant at high temperatures.Silicon belongs to the third periodic block P, while carbon belongs to the second periodic block P.One thing to note about their storage is that they must be kept away from humidity, heat and pressure.
SiC one-dimensional nanomaterials are widely considered to be an important component of the third generation of wideband gap semiconductor materials due to their unique excellent properties and wider application prospects due to their micro-morphology and crystal structure.
SiC one-dimensional nanomaterials with low threshold field intensity, high current density, high temperatures stability and other excellent characteristics are expected to be used as electric field emission materials, using this characteristics can be made into the third generation of new electronic light source, and will play a great role in image display technology. With the further study, the researchers also found that one-dimensional SiC nanostructures have a wide range of applications in hydrogen storage, photocatalysis and sensing fields.
The forbidden band width of SiC nanomaterials with high, high critical breakdown electric field and the thermal conductivity, small dielectric constant and high electron mobility of saturated, and radiation resistance is strong, good mechanical performance features, become the production of high frequency, high power, low energy consumption, high temperature resistance and radiation resistance device ideal material of electronic and optoelectronic devices.The chamber temperature photoluminescence of SiC nanowires makes them ideal materials for manufacturing blue light-emitting diodes and laser diodes.Micron-scale SiC whiskers have been used to strengthen ceramic matrix, metal matrix and polymer matrix composites. These composites all show good mechanical properties. It can be imagined that the properties of the composites will be further enhanced by using one-dimensional SiC nanomaterials with higher strength and hardness and larger aspect ratio as the reinforcing phase.In addition, silicon carbide nanoparticles are widely used in the following aspects:
Manufacture structural components: such as sliding bearings, liquid fuel nozzles, crucible, high power and high frequency molds, semiconductor components used in metallurgy, chemical industry, machinery, aerospace and energy industries.
Surface treatment of metal and other materials: cutting tools, molds, heat-resistant coating, heat dissipation surface coating, anti-corrosion coating and wave absorbing coating.
Composite materials: the preparation of metal base, ceramic base, polymer matrix composite materials.
As a high-grade refractories, polishing abrasive special materials, various ceramic parts, textile ceramics and high frequency ceramics.
Rubber tire manufacturing.
Manufacture abrasive materials with high hardness.
High temperature resistant sealing valve manufacturing.
Resistance heating element manufacturing.
Used to change the strength of an alloy.
High temperature nozzle manufacturing.
Specular coating in high UV environment.
Silicon Carbide Nanoparticles Price
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More information about Silicon Carbide Nanoparticles
Silicon Carbide Nanoparticles Chemical Data | |
Chemical symbol | SiC |
CAS No | 409-21-2 |
Group | Silicon 14 |
Electronic configuration | Silicon [Ne] 3s2 3p2 |
Molecular Weight | 40.1 |
Appearance | Green to Black or Gray Powder |
Melting Point | 2730 °C |
Boiling Point | N/A |
Density | 3.0-3.2 g/cm3 |
Solubility in H2O | N/A |
Electrical Resistivity | 1 to 4 10x Ω-m |
Specific Heat | 670 to 1180 J/kg-K |
Tensile Strength | 210 to 370 MPa (Ultimate) |
Thermal Conductivity | 120 to 170 W/m-K |
Thermal Expansion | 4.0 to 4.5 µm/m-K |
Young's Modulus | 370 to 490 Gpa |
Silicon Carbide Nanoparticles Health & Safety Information | |
Signal Word | Warning |
Hazard Statements | H315-H319-H335 |
Hazard Codes | Xi |
Risk Codes | 36/37/38 |
Safety Statements | 26-36 |
Transport Information | N/A |
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