The times are developing, and the application of zinc nitride is also improving. How is zinc nitride prepared?

Overview of zinc nitride Zn3N2 powder

Zinc nitride, chemical formula is Zn3N2, gray crystal, soluble in hydrochloric acid. It is rapidly decomposed into zinc hydroxide and ammonia in cold water. It is prepared by reacting zinc powder in an ammonia stream at 500-600°C or by heating and decomposing zinc amine. Zinc nitride (Zn3N2) is an inorganic compound of zinc and nitrogen, which usually produces (blue) gray crystals. It is a semiconductor. In its pure state, it has an anti-BixByite structure.

The chemical formula of zinc nitride is Zn3N2, a gray crystal, which is soluble in hydrochloric acid. It quickly decomposes into zinc hydroxide and ammonia in cold water. It is produced by reacting zinc powder in ammonia gas at 500-600℃ or decomposing amino zinc by heating.

A method for preparing a zinc nitride film includes the following steps

 (1) Put the substrate into the reaction chamber of the atomic layer deposition equipment;

 (2) Bring the zinc-containing precursor source into the reaction chamber of the atomic layer deposition equipment, so that the zinc atoms in the zinc-containing precursor source are adsorbed on the surface of the substrate.

 (3) Let the nitrogen-containing precursor source enter the reaction chamber of the atomic layer deposition equipment, and then ionize the nitrogen-containing precursor source through plasma. After ionization, the nitrogen atoms in the nitrogen-containing precursor source are partially deposited to form a nitrogen-zinc covalent bond with the zinc atoms on the surface of the substrate; alternatively, the nitrogen-containing precursor source is ionized by plasma, and then the ionized precursor source is ionized. The nitrogen precursor is ionized. The source is sent to the atomic layer deposition equipment for reaction. In the cavity, after ionization, the nitrogen atoms in the nitrogen-containing precursor source are partially deposited. Form a nitrogen-zinc covalent bond with the zinc atom on the surface of the substrate;

 (4) Repeat steps (2) and (3) to grow the zinc nitride film layer by layer.

 The method is simple and easy to implement, can obtain high-quality crystals, and is a repeatable preparation method. The nitrogen source is introduced into the atomic layer deposition system through the plasma, and then the chamber temperature, vacuum degree, cycle period, plasma conditions and other conditions are precisely adjusted. Adjust the band gap of the prepared zinc nitride film. According to different electrical and optical application requirements, the present invention can obtain various high-quality zinc nitride films with adjustable band gaps.

Application of zinc nitride Zn3N2 powder

1. Used to prepare zinc nitride film

Zinc nitride (Zn3N2) has a pyrite-resistant structure and has unique electrical and optical properties. Whether zinc oxide is an indirect band gap semiconductor or a direct band gap semiconductor, its energy band gap has always been the main point of contention in the semiconductor field. The problems of industry and academia, the differences in preparation methods and growth conditions, have a great influence on the band gap. For example, in the prior art, methods such as magnetron sputtering, chemical vapor deposition, electrostatic electrolysis, and molecular beam epitaxy can be used to prepare zinc nitride films. However, the stability of zinc nitride films prepared by most methods is poor, and the optical and electrical properties of zinc oxide films prepared by the same method are also very different. There is an urgent need to obtain a simple, easy and reproducible preparation method with high crystalline quality. The invention provides a method for preparing a zinc nitride film. The invention adopts the atomic layer deposition method to prepare the zinc nitride film, which can precisely control the band gap of the zinc nitride film. The prepared membrane has a uniform and complete structure and excellent performance.

 2. Used to prepare touch screen protective film and touch screen protective film

With the advancement of technology and the development of smart devices, there is an increasing demand for touch screens as the main window for human-computer interaction. This solution can overcome the problems of low coating yield, high production cost, and low production efficiency of using black ink screen printing to prepare the light-shielding layer in the BM area of the touch screen cover in the prior art. When the obtained product is used in conjunction with a liquid crystal display, it is easy to generate bubbles and cannot achieve the defect of perfect fit. Provide touch screen cover and touch screen cover film made of zinc nitride.

 The new touch screen cover film uses zinc nitride film as the functional layer of the black film, with low surface reflectivity and low production cost; high surface hardness, scratch resistance and abrasion resistance; high surface energy, which can effectively laminate liquid crystal displays; The thickness is about 60~200nm, which can eliminate the step effect. The new type provides touch screen cover films, including zinc nitride (Zn3N2) film and silicon nitride (Si3N4) film; among them, the thickness of the zinc nitride film is 10-50nm. Among them, if the thickness of the zinc nitride film exceeds 50nm, the adhesion of the film will decrease; if the thickness of the zinc nitride film is less than 10nm, light will be transmitted and the light shielding effect will not be achieved. The zinc nitride film has a strong ability to absorb visible light and has a black appearance, which is a functional layer of the black film. The touch screen cover film embodiments include zinc nitride (Zn3N2) film, silicon nitride (Si3N4) film, and protective film in sequence; among them, the thickness of the zinc nitride film is 10nm; the thickness of the silicon nitride film is 50nm, and the protective film is this Conventional plastic protective film in the field. The touch screen cover of this embodiment includes a glass substrate and the above-mentioned touch screen cover film, and the zinc nitride film of the touch screen cover film is connected to the glass substrate. The order is a silicon nitride (Si3N4) film and a protective film; among them, the thickness of the zinc nitride film is 10 nm; the thickness of the silicon nitride film is 50 nm, and the protective film is a conventional plastic protective film in the field. The touch screen cover of this embodiment includes a glass substrate and the above-mentioned touch screen cover film, and the zinc nitride film of the touch screen cover film is connected to the glass substrate. The order is a silicon nitride (Si3N4) film and a protective film; among them, the thickness of the zinc nitride film is 10 nm; the thickness of the silicon nitride film is 50 nm, and the protective film is a conventional plastic protective film in the field. The touch screen cover of this embodiment includes a glass substrate and the above-mentioned touch screen cover film, and the zinc nitride film of the touch screen cover film is connected to the glass substrate.

Zinc Nitride Zn3N2 powder price

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Zinc Nitride Zn3N2 powder supplier

As a global zinc nitride Zn3N2 powder supplier, Tanki New Materials Co.,Ltd has extensive experience in the performance, application and cost-effective manufacturing of advanced and engineered materials. The company has successfully developed a series of powder materials (molybdenum disilicide, Lanthanum nitride (LaN powder, calcium silicide, iron boride), high-purity targets, functional ceramics and structural devices, and provide OEM services.