Introduction and characteristics of gallium nitride materials

Overview of gallium nitride

Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. This compound is a very hard material with a wurtzite crystal structure. Its wide band gap is 3.4 electron volts, and its special performance is suitable for high power and high-frequency devices in the application of optoelectronics. For example, GaN is a substrate that can make violet laser diodes possible without using nonlinear optical frequency doubling. Its low sensitivity to ionizing radiation (like another group III nitrides) makes it a suitable material for satellite solar arrays. Because the device exhibits stability in a radiation environment, military and space applications may also benefit. Since GaN transistors can operate at higher temperatures and can operate at higher voltages than gallium arsenide (GaAs) transistors, they are ideal microwave frequency power amplifiers. In addition, GaN provides promising characteristics for THz devices. Due to high power density and voltage breakdown limitations, GaN is also becoming a promising candidate for 5G cellular base station applications.

GaN is a very hard, mechanically stable wide bandgap semiconductor material with high heat capacity and thermal conductivity. Although their lattice constants do not match, it is crack-resistant in its pure form and can be deposited in thin films on sapphire or silicon carbide. GaN can be doped with silicon (Si) or oxygen to be n-type and can be doped with magnesium (Mg) to be p-type. However, silicon and magnesium atoms change the way GaN crystals grow, introduce tensile stress and make them brittle. GaN with high crystalline quality can be obtained by depositing a buffer layer at a low temperature. This high-quality GaN led to the discovery of p-type GaN, pn junction blue/UV-LED, and room temperature excited emission. It is essential for laser action.

Applications of gallium nitride

The research and application of GaNmaterials is the current frontier and hot spot of global semiconductor research. It is a new type of semiconductor material for the development of microelectronic devices and optoelectronic devices. Together with semiconductor materials such as SIC and diamond, it is known as the successor to the first generation of Ge and Si. Semiconductor materials, second-generation GaAs, third-generation semiconductor materials after InP compound semiconductor materials. It has a wide direct bandgap, strong atomic bonds, high thermal conductivity, good chemical stability (hardly corroded by any acid) and other properties and strong anti-overlapping ability. It is used in optoelectronics, high temperature and high power devices and The application of high-frequency microwave devices has broad prospects.

LEDs

GaN-based violet laser diodes are used to read Blu-ray Discs. The mixture of GaN with In (InGaN) or Al (AlGaN) with a bandgap dependent on the ratio of In or Al to GaN allows the manufacture of light-emitting diodes (LEDs) with colors that can go from red to ultra-violet.

Transistors

GaN transistors are suitable for high frequency, high voltage, high temperature, and high-efficiency applications. GaN HEMTs have been offered commercially since 2006 and have found immediate use in various wireless infrastructure applications due to their high efficiency and high voltage operation. The second generation of devices with shorter gate lengths will address higher frequency telecom and aerospace applications. GaN-based MOSFET and MESFET transistors also have advantages, including lower losses in high-power electronic products, especially in automotive and electric vehicle applications. Since 2008, these can be formed on silicon substrates. High-voltage (800 V) Schottky barrier diodes (SBD) were also produced. GaN-based electronic products (non-pure GaN) have the potential to greatly reduce energy consumption, not only in consumer applications but even in power transmission facilities. Unlike silicon transistors that turn off due to power surges, GaN transistors are generally depletion-type devices (i.e., on/resistance when the gate-source voltage is zero).

Radars

They are also used in military electronic equipment, such as active electronically scanned array radars. The US Army-funded Lockheed Martin to integrate GaN active device technology into the AN/TPQ-53 radar system to replace the two medium-range radar systems, AN/TPQ-36 and AN/TPQ-37. The AN/TPQ-53 radar system is designed to detect, classify, track and locate enemy indirect fire systems and unmanned aerial systems.

Nanoscale

GaN nanotubes and nanowires are proposed for applications in nanoscale electronics, optoelectronics, and biochemical-sensing applications.

Gallium nitride price

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